In this paper, a silicon-based solar cell defect detection method using infrared image analysis is presented. The method can exhibit hidden cracks and the defects due to the carrier concentration distribution uniformity. The method indicates the location of defect, and further, calculates the area percentage of defective elements immediately without applying the traditional I-V test to silicon-based solar cell module. The method saves much time in identifying unqualified silicon-based solar cell.

silicon-based solar cell, defect detection method, area percentage of defective elements.