The influence of different Ohmic contacts on the thermoelectric property of n-type high purity-crystalline á100ñ Ge grown by the Czochralski method was investigated.Threedifferentcontacts formation schemes, self-diffused Li-In/Ga eutectic (75.5/24.5 wt%), In/Sn solder (95.0/5.0 wt%), and In/Ga (75.5/24.5 wt%) eutectic, have been carried out. The voids and pin hole free surface morphology, better intermetallic and improved linearity of In/Ga eutectic contacts seem promising to reduce the Fermi level pinning and, therefore, allows the formation of good Ohmic contacts to n-type high purity Germanium. This is attributed due to the low resistivity In-Ge phase and the quantum mechanical tunneling through the Schottky barrier formed between the In-Ge alloy and n-type Ge substrate. We measured a carrier concentration of ~4.10E10 cm^-3, resistivity ~1.63E4W.cm, and mobility ~3.02E4 cm².V^-1s^-1 at 77 K, respectively.

Czochralski method, Schottky barrier,quantum mechanical tunneling.