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	Volume 1, Issue 2 Pg 79 - 109 (June 2010)
	Volume 1, Issue 1 Pg 1 - 78 (March 2010)

Far East Journal of Mechanical Engineering and Physics

Far East Journal of Mechanical Engineering and Physics
Volume 1, Issue 2, Pages 99 - 109 (June 2010)

SCALAR RELATIVISTIC AND IMPURITY EFFECTS ON NANO-InSb MIS CAPACITOR CHARACTERISTICS
H. Simchi, M. Mehmandoost, Sh. Mohammadnejad, E. Mahmoodzadeh and M. H. Saani

Abstract:
In this paper, we modeled a nano-InSb metal-insulator-semiconductor (MIS) capacitor with one dimensional Schrödinger-Poisson coupled equation in both nonrelativistic and scalar relativistic cases. We showed, the charge density is peaked near the middle of the channel in nonrelativistic case (called size quantization) and it disappears as we consider the scalar relativistic effects although we do not change the size. Consequently the electron distribution looks more classical for scalar relativistic case. Also we showed the existence of an effective coulomb (or parabola) like potential which can be created by an impurity, cleaning process of surface, insulator layer deposition, or misalignment in lithography process of gate, confines the electrons at surface and it means that the device always remains in the OFF regime. Therefore one may conclude that, in manufacturing nano-InSb MIS capacitor the cleaning process of InSb surface, growth process of insulator layer and lithography process of gate, are very important and critical processes. Also one should attend to classical behavior in characterization process of device although the size of device is in nanometer scale.

Keywords and phrases: nano-InSb MIS capacitor, Schrödinger-Poisson coupled equation, scalar relativistic effect, electron distribution, Fermi energy level.

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