BAND OFFSET CALCULATIONS OF DILUTED MAGNETIC HETEROSTRUCTURE ZnMnSe/ZnSSe

S. Ben Afia (Tunisia), M. Triki (Tunisia), S. Jaziri (Tunisia) and H. Belmabrouk (Tunisia)

Received June 18, 2008; Revised October 28, 2008

Abstract

Theoretical study is made to calculate the band offset of pseudomorphically strained  interface. Therefore on the basis of model ‘solid theory’, the strain effects electrons, heavy holes (hh) and light holes (lh) are investigated as a function of sulphur composition x ranging from 0 to 1 with and without taken into account the effect of an applied magnetic field. In the frame of a mean field approximation, main peculiar feature is revealed indicates that  heterostructure allows a direct interband transition for the carriers for molar fraction x ranging between 0 and 4%. Over this range of sulphur content, the  heterostructure is of type II band alignment. Our result provides useful information for experimentalists and opens the way to realise devices based on  structures for

Keywords and phrases: band offset, diluted magnetic heterostructure ZnMnSe/ZnSSe.