In this paper, we introduce an approach to increase homogeneity of distribution of implanted dopant in enriched area due to organization of drains. Also we introduce a model and analytical approach for analysis of the considered technological process in multilayer structures with account variation in time parameters of the process and nonlinearity of mass transport.

ion implantation, multilayer structure, changing of distribution of concentration of dopant, model of process, analytical approach for analysis.

Received: May 21, 2024; Accepted: June 10, 2024; Published: June 28, 2024

How to cite this article: E. L. Pankratov, On possibility of drain of dopant in a multilayer structure to increase homogeneity of distribution of the dopant’s concentration, International Journal of Materials Engineering and Technology 23(1) (2024), 81-100. https://doi.org/10.17654/0975044424005

This Open Access Article is Licensed under Creative Commons Attribution 4.0 International License

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